High Overtone Bulk Acoustic Wave Research Articles

Investigation of phonon lifetimes and magnon–phonon coupling in YIG/GGG hybrid magnonic systems in the diffraction limited regime

Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace to medical imaging fields. Bulk acoustic wave (BAW) phonons are attractive candidates for quantum memories because of their long lifetimes and high operating frequencies. In this study, we establish a modeling approach to design hybrid magnonic high-overtone bulk acoustic wave resonator (HBAR) structures for high-density, long-lasting quantum memories, and efficient quantum transduction devices. We illustrate the approach by investigating a hybrid magnonic system, consisting of a gadolinium iron garnet (GGG) thick film and a patterned yttrium iron garnet (YIG) thin film. The BAW phonons are excited in GGG thick film via coupling with magnons in the YIG thin film. We present theoretical and numerical analyses of the diffraction-limited BAW phonon lifetimes, modeshapes, and magnon–phonon coupling strengths in YIG/GGG planar and confocal HBAR (CHBAR) structures. We utilize Fourier beam propagation and Hankel transform eigenvalue problem methods and compare the two methods. We discuss strategies to improve the phonon lifetimes in the diffraction-limited regime, since increased lifetimes have direct implications on the storage times of quantum states for quantum memory applications. We find that ultra-high cooperativities and phonon lifetimes on the order of ∼105 and ∼10 milliseconds, respectively, could be achieved using a CHBAR structure with 10μm YIG lateral area. Additionally, high integration density of on-chip memory or transduction centers is naturally desired for high-density memory or transduction devices. The proposed CHBAR structure will offer more than 100-fold improvement of integration density relative to a recently demonstrated YIG/GGG device. Our results will have direct applicability for devices operating in the cryogenic or milliKelvin regimes. For example, our study will inform the design of HBAR devices that could couple with superconducting qubits for promising quantum information platforms.

Coupling high-overtone bulk acoustic wave resonators via superconducting qubits

In this work, we present a device consisting of two coupled transmon qubits, each of which are coupled to an independent high-overtone bulk acoustic wave resonator (HBAR). Both HBAR resonators support a plethora of acoustic modes, which can couple to the qubit near resonantly. We first show qubit–qubit interaction in the multimode system and, finally, quantum state transfer where an excitation is swapped from an HBAR mode of one qubit to an HBAR mode of the other qubit.

Macroscopic Quantum Test with Bulk Acoustic Wave Resonators.

Recently, solid-state mechanical resonators have become a platform for demonstrating nonclassical behavior of systems involving a truly macroscopic number of particles. Here, we perform the most macroscopic quantum test in a mechanical resonator to date, which probes the validity of quantum mechanics by ruling out a classical description at the microgram mass scale. This is done by a direct measurement of the Wigner function of a high-overtone bulk acoustic wave resonator mode, monitoring the gradual decay of negativities over tens of microseconds. While the obtained macroscopicity of μ=11.3 is on par with state-of-the-art atom interferometers, future improvements of mode geometry and coherence times could test the quantum superposition principle at unprecedented scales and also place more stringent bounds on spontaneous collapse models.

All Acoustical Excitation of Spin Waves in High Overtone Bulk Acoustic Resonator

The hybrid high overtone bulk acoustic wave resonators (HBARs) consisting of a piezoelectric film transducers and gallium gadolinium garnet substrates with yttrium iron garnet films (YIG-GGG-YIG) are used for experimental excitation and detection of acoustically driven spin waves (ADSWs). Two types of HBAR transducers made of Al-ZnO-Al films (differed through the electrodes’ geometry) were deposited onto YIG-GGG-YIG trilayers with different YIG film thicknesses and doping levels and served for excitation of multimode HBAR at gigahertz frequencies. ADSWs were detected by measuring the shifts of resonant HBAR modes in a tangential external magnetic field when the conditions for magnetoelastic resonance (MER) were satisfied. It was shown that the design of the transducer with a continuous bottom electrode provides all acoustical excitation of spin waves (pure ADSWs), suppressing the additional inductive magnetic dynamics excitation due to the electrodes’ geometry. The theoretical study of the HBAR spectrum in a magnetic field showed that the resonance harmonics in the MER region can either almost continuously transfer from one to another, or decay and form an evident magnetoelastic gap. In this case, the shift of resonant frequencies can achieve several intermodal distances. The results obtained are important for applications of HBAR-based devices in spintronics and magnonics.

High-order mode bulk acoustic wave resonators based on polarity-inverted SiAlN/AlN multilayered films for high-frequency operation

AlN film bulk acoustic wave (BAW) resonators operating at above 5 GHz for next generation mobile communications present some problems, such as the very thin thickness of the piezoelectric film and electrode films. These cause degradations of the power handling capability, electromechanical coupling factor, and Q value in film BAW resonators. Polarity-inverted multilayered AlN film BAW resonators can operate in high-order mode resonance. Therefore, an n-layer polarity-inverted film BAW resonator has n-times thicker piezoelectric film thickness than a standard BAW resonator with a monolayer piezoelectric film operating at same frequency. However, fabrication methods for polarity-inverted multilayered AlN films have not been established. This paper examines the effect of Si doping on AlN films on the crystal orientation, polarity direction, and electromechanical coupling factor (kt2). Furthermore, we fabricated and evaluated two- to eight-layer polarity-inverted SiAlN/AlN film high-overtone bulk acoustic wave resonators (HBARs). The polarity of the SixAl1−xN films inverted around x = 0.024–0.13. The crystal orientation and kt2 of the SixAl1-xN films were degraded with increasing Si concentration x. The eight-layer polarity-inverted SiAlN/AlN film HBAR resonated in the eighth mode. Moreover, the experimental longitudinal wave insertion loss exhibited a similar trend to the theoretical curve calculated by a Mason's equivalent circuit model considering the polarity inverted structure. The eight-layer polarity-inverted HBARs had approximately eight-times thicker piezoelectric film thickness than the monolayer AlN film HBAR. The insertion loss improved with increasing the number of polarity-inverted layers.

Microwave Acoustic Attenuation in CTGS Single Crystals.

This article presents a study of special material properties of the single crystalline material Ca3TaGa3Si2O14 (CTGS = Catangasite). The comparatively highly ordered crystal structure and acceptable piezoelectric strength make it a candidate for microacoustic applications under extreme conditions. Obviously, low-loss dynamic behavior is typical for this crystal which consequently enables high-temperature use. As a particular challenge, the behavior at gigahertz frequencies is investigated here. For that, High overtone Bulk Acoustic wave Resonator (HBAR) type measurements in the range of 1-6 GHz are performed. The selection of five distinctive propagation directions for exclusively pure or quasi-longitudinal modes enables to derive the dynamic viscosities from the quality factors of HBAR results. The observed frequency dependences exhibit Akhiezer behavior as the predominant loss mechanism in the cases examined.

Increase of electromechanical coupling coefficient k t 2 in (0001)-oriented AlN films by chromium doping

Piezoelectric AlN films possess high bulk acoustic wave velocity, low acoustic attenuation, and good temperature characteristics. However, AlN film bulk acoustic wave resonators (FBARs) have a relatively small electromechanical coupling coefficient k eff 2. It was recently reported that Cr doping in AlN films increased the piezoelectric constant d 33. The k t 2 of AlN FBARs may thus be enhanced by Cr doping. In this study, we investigated the effect of Cr doping in (0001)-oriented AlN films on k t 2 from the frequency characteristics of high overtone bulk acoustic wave resonators. k t 2 of the Cr-doped AlN films was increased for Cr contents of less than 3%. The maximum k t 2 observed for the Cr0.012Al0.088N film was 5.9%, which was approximately 1.4 times higher than that of pure AlN film (k t 2 = 4.4%).

The Effects of a Coated Material Layer on High-Overtone Bulk Acoustic Resonator and its Possible Applications.

This article describes the characterization and analysis of the effects an additional polymer layer has on a high-overtone bulk acoustic wave resonator based on Ba0.5Sr0.5TiO3 (BSTO) thin film by studying its spectral information. From both the simulation (numerical model) and experimental results of the resonator with and without coating, significant difference of both cases is evident in the spacing of the parallel resonance frequencies (SPRFs), effective coupling coefficient ( [Formula: see text]), and quality factor distribution of the resonator. The acoustic velocity of the coated material (SU-8) is calculated from the new periodicity introduced in the SPRF distribution. The SPRF distribution of the SU-8-coated resonator decreases overall as expected due to the additional layer introduced but sharply increases in regions defined by the thickness and acoustic velocity of the SU-8 layer. The mechanical loss of the added layer has significant effect on the parameters of the resonator. The study reveals that this method of characterization can be used to approximate the mechanical loss of materials such as polymers or polymer composites. The simulation with finite-element method agrees with the experimental result.

Hybrid integrated photonics using bulk acoustic resonators

Integrated photonic devices based on Si3N4 waveguides allow for the exploitation of nonlinear frequency conversion, exhibit low propagation loss, and have led to advances in compact atomic clocks, ultrafast ranging, and spectroscopy. Yet, the lack of Pockels effect presents a major challenge to achieve high-speed modulation of Si3N4. Here, microwave-frequency acousto-optic modulation is realized by exciting high-overtone bulk acoustic wave resonances (HBAR) in the photonic stack. Although HBAR is ubiquitously used in modern communication and superconducting circuits, this is the first time it has been incorporated on a photonic integrated chip. The tight vertical acoustic confinement releases the lateral design of freedom, and enables negligible cross-talk and preserving low optical loss. This hybrid HBAR nanophotonic platform can find immediate applications in topological photonics with synthetic dimensions, compact opto-electronic oscillators, and microwave-to-optical converters. As an application, a Si3N4-based optical isolator is demonstrated by spatiotemporal modulation, with over 17 dB isolation achieved.

Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics

Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency >99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding (f × Q) and phonon lifetimes up to 1.36 × 1017 Hz and 500 µs respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits.

Frequency and magnetic field mapping of magnetoelastic spin pumping in high overtone bulk acoustic wave resonator

We report on the first observation of microvolt-scale inverse spin Hall effect (ISHE) dc voltage driven by an acoustic spin pumping (ASP) in a bulk acoustic wave (BAW) resonator formed by a Al-ZnO-Al-YIG(1)-GGG-YIG(2)-Pt structure. When 2 mW power is applied to an Al-ZnO-Al transducer, the voltage VISHE ∼ 4 μV in the Pt film is observed as a result of resonant ASP from YIG(2) to Pt in the area ∼ 170 μm. The results of frequency and magnetic field mapping of VISHE(f,H) together with reflectivity of the resonator show an obvious agreement between the positions of the voltage maxima and BAW resonance frequencies fn(H) on the (f, H) plane. At the same time a significant asymmetry of the VISHE(fn(H)) value in reference to the magnetoelastic resonance (MER) line fMER(H) position is revealed, which is explained by asymmetry of the magnetoelastic waves dispersion law.

Magneto Acoustic Spin Hall Oscillators

This paper introduces a novel oscillator that combines the tunability of spin Hall-driven nano oscillators with the high quality factor (Q) of high overtone bulk acoustic wave resonators (HBAR), integrating both reference and tunable oscillators on the same chip with CMOS. In such magneto acoustic spin Hall (MASH) oscillators, voltage oscillations across the magnetic tunnel junction (MTJ) that arise from a spin-orbit torque (SOT) are shaped by the transmission response of the HBAR that acts as a multiple peak-bandpass filter and a delay element due to its large time constant, providing delayed feedback. The filtered voltage oscillations can be fed back to the MTJ via (a) strain, (b) current, or (c) magnetic field. We develop a SPICE-based circuit model by combining experimentally benchmarked models including the stochastic Landau-Lifshitz-Gilbert (sLLG) equation for magnetization dynamics and the Butterworth Van Dyke (BVD) circuit for the HBAR. Using the self-consistent model, we project up to ~50X enhancement in the oscillator linewidth with Q reaching up to 52825 at 3 GHz, while preserving the tunability by locking the STNO to the nearest high Q peak of the HBAR. We expect that our results will inspire MEMS-based solutions to spintronic devices by combining attractive features of both fields for a variety of applications.

Spin pumping in a composite high overtone bulk acoustic wave resonator

A new way of generating a pure spin current using a magnetoelectric composite high-overtone bulk acoustic-wave resonator (HBAR) based on a layered Al–ZnO–Al–Gd3Ga5O12–Y3Fe5O12–Pt structure is proposed. It is established that the efficiency of generating the rf magnetic field driving the spin current by this method exceeds that of sources which use surface acoustic waves for the excitation of magnetic dynamics and is not inferior to the efficiency of usual electromagnetic ways of exciting a pure spin current that employ microwave cavities.

Resonant spectrum method for characterizing Ba0.5Sr0.5TiO3 based high overtone bulk acoustic wave resonators

This letter reports the use of the resonant spectrum method to characterize a high overtone bulk acoustic wave resonator (HBAR) which has a thin film ferroelectric BaSrTiO3 (BSTO) active layer on a YAG substrate. The HBAR works on the principle of electric field induced piezoelectricity of the thin film ferroelectric BSTO and exhibits switching functionality. From the parallel and series resonant frequencies of each of the multiple peaks in the frequency spectrum of the HBAR, the distribution of spacing of parallel resonance frequency and the distribution of effective coupling coefficient are studied and parameters like acoustic wave velocity, electromechanical coupling coefficient, elastic constant, and density for the thin film are determined. The influence of dc bias voltages on the distribution of the effective coupling coefficient and the electromechanical coupling coefficient is also reported. This letter also establishes the relationship between the relative tunability of the device capacitance and the electromechanical coupling coefficient.

Acoustic spin pumping in magnetoelectric bulk acoustic wave resonator

We present the generation and detection of spin currents by using magnetoelastic resonance excitation in a magnetoelectric composite high overtone bulk acoustic wave (BAW) resonator (HBAR) formed by a Al-ZnO-Al-GGG-YIG-Pt structure. Transversal BAW drives magnetization oscillations in YIG film at a given resonant magnetic field, and the resonant magneto-elastic coupling establishes the spin-current generation at the Pt/YIG interface. Due to the inverse spin Hall effect (ISHE) this BAW-driven spin current is converted to a dc voltage in the Pt layer. The dependence of the measured voltage both on magnetic field and frequency has a resonant character. The voltage is determined by the acoustic power in HBAR and changes its sign upon magnetic field reversal. We compare the experimentally observed amplitudes of the ISHE electrical field achieved by our method and other approaches to spin current generation that use surface acoustic waves and microwave resonators for ferromagnetic resonance excitation, with the theoretically expected values.

A high-overtone bulk acoustic wave resonator-oscillator-based 4.596 GHz frequency source: Application to a coherent population trapping Cs vapor cell atomic clock.

This article reports on the design and characterization of a high-overtone bulk acoustic wave resonator (HBAR)-oscillator-based 4.596 GHz frequency source. A 2.298 GHz signal, generated by an oscillator constructed around a thermally controlled two-port aluminum nitride-sapphire HBAR resonator with a Q-factor of 24,000 at 68 °C, is frequency multiplied by 2-4.596 GHz, half of the Cs atom clock frequency. The temperature coefficient of frequency of the HBAR is measured to be -23 ppm/ °C at 2.298 GHz. The measured phase noise of the 4.596 GHz source is -105 dB rad(2)/Hz at 1 kHz offset and -150 dB rad(2)/Hz at 100 kHz offset. The 4.596 GHz output signal is used as a local oscillator in a laboratory-prototype Cs microcell-based coherent population trapping atomic clock. The signal is stabilized onto the atomic transition frequency by tuning finely a voltage-controlled phase shifter implemented in the 2.298 GHz HBAR-oscillator loop, preventing the need for a high-power-consuming direct digital synthesis. The short-term fractional frequency stability of the free-running oscillator is 1.8 × 10(-9) at one second integration time. In locked regime, the latter is improved in a preliminary proof-of-concept experiment at the level of 6.6 × 10(-11) τ(-1/2) up to a few seconds and found to be limited by the signal-to-noise ratio of the detected CPT resonance.

High-sensitivity open-loop electronics for gravimetric acoustic-wave-based sensors.

Detecting chemical species in gas phase has recently received an increasing interest mainly for security control, trying to implement new systems allowing for extended dynamics and reactivity. In this work, an open-loop interrogation strategy is proposed to use radio-frequency acoustic transducers as micro-balances for that purpose. The resulting system is dedicated to the monitoring of chemical compounds in gaseous or liquid-phase state. A 16 Hz standard deviation is demonstrated at 125 MHz, with a working frequency band in the 60 to 133 MHz range, answering the requirements for using Rayleigh- and Love-wave-based delay lines operating with 40-μm acoustic wavelength transducers. Moreover, this electronic setup was used to interrogate a high-overtone bulk acoustic wave resonator (HBAR) microbalance, a new sensor class allowing for multi-mode interrogation for gravimetric measurement improvement. The noise source still limiting the system performance is due to the analog-to-digital converter of the microcontroller, thus leaving open degrees-of-freedom for improving the obtained results by optimizing the voltage reference and board layout. The operation of the system is illustrated using a calibrated galvanic deposition at the surface of Love-wave delay lines to assess theoretical predictions of their gravimetric sensitivity and to compare them with HBAR-based sensor sensitivity.

Acoustic characterization of AlN films using a High Overtone Bulk acoustic wave resonator

Using the composite resonator with additional thick AlN film with the FWHM of rocking curve of 2.53° under investigation, the bulk acoustic wave attenuation constant and sound velocity along c-axis were directly measured. The method of High Overtone Bulk acoustic wave Resonator (HBAR) spectroscopy based on frequency, measurements of the positions of the resonator peculiarities of phase and amplitude of electromagnetic wave reflection coefficient from composite resonator structure was applied. The method provides attenuation and velocity measurement in a wide frequency band, using the same sample. For the measurements, standard and modified HBAR spectroscopy based on the analysis of only parallel resonance properties of composite resonator structures were used.